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ID Author(s) Title Publisher Year Pages Language Size Extension GET
1405863 Chen, Jr-Tai Linköping studies in science and technology. Dissertations ; Number 1662.
MOCVD growth of GaN-based high electron mobility transistor structures
9789175190730, 9175190737
Linköping University 2015 81 English 9 Mb pdf GET

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 Martin Beniston, Michel M. Verstraete

Frederick J. Francis
Гузь А.Н., Кубенко В.Д., Черевко М.А.
Ефремова.
Колмогоров А.Н., Юшкевич А.П. (ред.)
Charalambos A. Charalambides
Kreuzer, Robbiano.
Ernst-Ulrich Gekeler (auth.)
Адамс Дж.
T.D. Frank
Georges Valiron
Г. И. ЗАПОРОЖЕЦ
Michael A. Dritschel, Michael A. Dritschel
Walter Van Assche (auth.)
Levi-Civita T.
M.I. Zelikin, S.A. Vakhrameev
Matousek J.
Ranicki A.A. (ed.)
Гриффитс, Морган. (P.A.Griffiths,J.W.Morgan)

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