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ID Author(s) Title Publisher Year Pages Language Size Extension GET
1405863 Chen, Jr-Tai Linköping studies in science and technology. Dissertations ; Number 1662.
MOCVD growth of GaN-based high electron mobility transistor structures
9789175190730, 9175190737
Linköping University 2015 81 English 9 Mb pdf GET

 Gary D. Doolen, Ronnie Mainieri, Vldimir I. Tsifrinovich, Gennady P. Berman
Спорыхин А.Н., Шашкин А.И.
Коршун И., Толмачева Е.

Ошанин И.М. (ред.)
Докштейн С.Я., Макарова Е.А., Радоминова С.С.
Serre J.-P.
V. A. Vassiliev
Vergne M.
Городецький В.В., Нагнибида М.И.
Richard Bellman
Bochner S., Martin W.T.
John B. Conway
Сансоне Дж.
Piotr Antosik, Charles Swartz (auth.)
Harm Bart, Israel Gohberg, Marinus A. Kaashoek, André C.M. Ran
L.P. Lebedev, I.I. Vorovich, G.M. Gladwell
Ku H.T., et al. (eds.)
Бахман Ф.
Atiyah M.F., Bott R., Shapiro A.

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